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Ferroelectric-gate Field Effect Transistor Memories: Device Physics And Applications

Byung-eun Park Edited by Hiroshi Ishiwara , Masanori Okuyama
Apr 18, 2021
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Overview

Appropriate for
Language
English
No. of Pages
347
Topics in Applied Physics
Publisher: Springer Nature
Shipping dimensions: 9" H x 6" W x 1" L
ISBN: 9789402414165
Life stage: null

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