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Ferroelectric-gate Field Effect Transistor Memories: Device Physics And Applications

Byung-eun Park Édition : Hiroshi Ishiwara , Masanori Okuyama

15 septembre 2016

283,95 $

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Description

Langue

anglais

Pages

347

Topics in Applied Physics

Publié par: Springer-Verlag/Sci-Tech/Trade

Dimensions à l’expédition: 9" H x 6" W

ISBN: 9789402408393

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Évaluation éditoriale

hiroshi ishiwara

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